国家/地区 England（3）
关键词
出版物
出版时间 2016（3）
机构 UNIV NOTTINGHAM（3）
作者 EAVES L（3）

Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors

PHYSICAL REVIEW LETTERS

VDOVIN EE, MISHCHENKO A, GREENAWAY MT, ZHU MJ, GHAZARYAN D, MISRA A, CAO Y, MOROZOV SV, MAKAROVSKY O, FROMHOLD TM, PATANE A, SLOTMAN GJ, KATSNELSON MI, GEIM AK, NOVOSELOV KS, EAVES L

High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

CHENG TS, DAVIES A, SUMMERFIELD A, CHO YJ, CEBULA I, HILL RJA, MELLOR CJ, KHLOBYSTOV AN, TANIGUCHI T, WATANABE K, BETON PH, FOXON CT, EAVES L, NOVIKOV SV

Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy

SCIENTIFIC REPORTS

SUMMERFIELD A, DAVIES A, CHENG TS, KOROLKOV VV, CHO YJ, MELLOR CJ, FOXON CT, KHLOBYSTOV AN, WATANABE K, TANIGUCHI T, EAVES L, NOVIKOV SV, BETON PH