国家/地区 Japan（4）
关键词
出版物 JAPANESE JOURNAL OF APPLIED PHYSICS（4）
出版时间 2016（4）
机构 TOHOKU UNIV（4）
作者 FUKIDOME H（3） SUEMITSU M（3） CHO WJ（2） KIM KS（2）
OTSUJI T（2） PARK GH（2） SUEMITSU T（2）

Solution-processed Al2O3 gate dielectrics for graphene field-effect transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M

Graphene on C-terminated face of 4H-SiC observed by noncontact scanning nonlinear dielectric potentiometry

JAPANESE JOURNAL OF APPLIED PHYSICS

YAMASUE K, FUKIDOME H, TASHIMA K, SUEMITSU M, CHO Y

High-performance self-aligned graphene transistors fabricated using contamination-and defect-free process

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M

Electronic properties and strain sensitivity of CVD-grown graphene with acetylene

JAPANESE JOURNAL OF APPLIED PHYSICS

YANG M, SASAKI S, OHNISHI M, SUZUKI K, MIURA H