国家/地区 Malaysia（3）
关键词 FIELD EFFECT TRANSISTOR（3）
出版物
出版时间 2016（3）
机构 UNIV MALAYA（3）
作者 AHMAD H（3）

A new approach to study the effect of generation rate on drain-source current of bilayer graphene transistors

INDIAN JOURNAL OF PHYSICS

AHMAD H, GHADIRY M, ABDMANAF A

New device structures for graphene nanoribbon field effect transistors

MATERIALS EXPRESS

GHADIRY M, AHMAD H, YI CW, ABD MANAF A

Exploiting Edge Effect to Control Generation Rate and Breakdown Voltage in Graphene Nanoribbon Field Effect Transistors

PLASMONICS

GHADIRY M, AHMAD H, HIVECHI A, TAVAKOLI F, ABD MANAF A