国家/地区 Korea（4） China（2） Usa（2）
关键词 TRANSISTOR（16）
出版物 SENSORS ACTUATORS B.（2）
出版时间 2017（16）
机构 TRINITY COLL.（2）
作者 HALLAM T（2） SHI JY（2）

Tuneable photoconductivity and mobility enhancement in printed MoS2/graphene composites

2D MATERIALS

KELLY AG, MURPHY C, VEGAMAYORAL V, HARVEY A, ESMAEILY AS, HALLAM T, MCCLOSKEY D, COLEMAN JN

Multilayer Graphene-WSe2 Heterostructures for WSe2 Transistors

ACS NANO

TANG HL, CHIU MH, TSENG CC, YANG SH, HOU KJ, WEI SY, HUANG JK, LIN YF, LIEN CH, LI LJ

Controlling Defect and Dopant Concentrations in Graphene by Remote Plasma Treatments

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

MCMANUS JB, HENNESSY A, CULLEN CP, HALLAM T, MCEVOY N, DUESBERG GS

A microfluidic flow-through chip integrated with reduced graphene oxide transistor for influenza virus gene detection

SENSORS ACTUATORS BCHEMICAL

CHAN CY, SHI JY, FAN YD, YANG M

Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations

NANOTECHNOLOGY

SUL O, KIM K, JUNG Y, CHOI E, LEE SB

Graphene quantum dot (GQD)-induced photovoltaic and photoelectric memory elements in a pentacene/GQD field effect transistor as a probe of functional interface

JOURNAL OF PHYSICS DAPPLIED PHYSICS

KIM Y, CHO S, KIM H, SEO S, LEE HU, LEE J, KO H, CHANG M, PARK B

Investigation on the Ion-Gel Dielectric Characteristics for Graphene Transistor Toward Flexible and Transparent Devices

SCIENCE OF ADVANCED MATERIALS

KIM T, KIM UJ, SON HB, HUR J

Visible light emission in graphene field effect transistors

NANO FUTURES

BELTAOS A, BERGREN AJ, BOSNICK K, PEKAS N, LANE S, CUI K, MATKOVIC A, MELDRUM A

Large-Area Schottky Barrier Transistors Based on Vertically Stacked Graphene-Metal Oxide Heterostructures

ADVANCED FUNCTIONAL MATERIALS

KIM S, CHOI YJ, CHOI Y, KANG MS, CHO JH

A Quasi-Static Model of Silicon Substrate Effects in Graphene Field Effect Transistors

IEEE ELECTRON DEVICE LETTERS

HADDAD PA, FLANDRE D, RASKIN JP