国家/地区 China（4） Korea（2） Usa（2）
关键词 SCHOTTKY BARRIER（11）
出版物 ACS APPLIED MATERIA.（2）
出版时间 2018（11）
机构 HENAN NORMAL.（3）
作者 DAI XQ（2） LI W（2） MA YQ（2） ZHANG F（2）

Modulating Schottky Barrier of MoS2 to Enhance Hydrogen Evolution Reaction Activity by Incorporating with Vertical Graphene Nanosheets Derived from Organic Liquid Waste

CHEMELECTROCHEM

WU AJ, XU AN, YANG J, LI XD, WANG L, WANG JF, MACDONALD D, YAN JH

PtSe2/graphene hetero-multilayer: gate-tunable Schottky barrier height and contact type

NANOTECHNOLOGY

XIA CX, DU J, FANG LZ, LI XP, ZHAO X, SONG XH, WANG TX, LI JB

Bias- and Gate-Tunable Gas Sensor Response Originating from Modulation in the Schottky Barrier Height of a Graphene/MoS2 van der Waals Heterojunction

ACS APPLIED MATERIALS INTERFACES

TABATA H, SATO Y, OI K, KUBO O, KATAYAMA M

High-Performance Two-Dimensional Schottky Diodes Utilizing Chemical Vapour Deposition-Grown Graphene-MoS2 Heterojunctions

ACS APPLIED MATERIALS INTERFACES

HUANG HF, XU WS, CHEN TX, CHANG RJ, SHENG YW, ZHANG QY, HOU LL, WARNER JH

Strain effects on the Schottky contacts of graphene and MoSe2 heterobilayers

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

ZHANG F, LI W, MA YQ, DAI XQ

Piezotronic graphene barristor: Efficient and interactive modulation of Schottky barrier

NANO ENERGY

KIM S, CHOI YJ, WOO HJ, SUN Q, LEE S, KANG MS, SONG YJ, WANG ZL, CHO JH

Non-destructive photovoltaic reading of interface type memristors using graphene as transparent electrode

JOURNAL OF ALLOYS COMPOUNDS

WANG YH, WU LY, LIU GD, LIU LX

MORPHOLOGICAL, STRUCTURAL AND OPTICAL CHARACTERISTICS OF GRAPHENE OXIDE LAYERS AND METAL/INTERLAYER/SEMICONDUCTOR PHOTOVOLTAIC DIODE APPLICATION

JOURNAL OF OVONIC RESEARCH

GULLU O, CANKAYA M

On Image Charge Induced Barrier Lowering in Graphene-Semiconductor Contacts

IEEE TRANSACTIONS ON NANOTECHNOLOGY

DONG ZP, GUO J

Schottky barrier tuning of the graphene/SnS2 van der Waals heterostructures through electric field

SOLID STATE COMMUNICATIONS

ZHANG F, LI W, MA YQ, DAI XQ