国家/地区 Korea（3）
关键词 SCHOTTKY DIODE（7）
出版物 ACS PHOTONICS（2）
出版时间 2019（7）
机构 NATL TAIWAN .（2）
作者

Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer

ACS APPLIED MATERIALS INTERFACES

KE WC, TESFAY ST, SEONG TY, LIANG ZY, CHIANG CY, CHEN CY, SON W, CHANG KJ, LIN JC

Geometrically Enhanced Graphene Tunneling Diode With Lateral Nano-Scale

IEEE ELECTRON DEVICE LETTERS

YANG JH, SHIN JH, KIM S, PYO G, JANG AR, YANG HW, KANG DJ, JANG JE

Theory of Thermionic Carrier Injection in Graphene/Organic Schottky Interface

FRONTIERS IN MATERIALS

ANG YS, ANG LK

Graphene Schottky Varactor Diodes for High-Performance Photodetection

ACS PHOTONICS

LEVI A, KIRSHNER M, SINAI O, PERETZ E, MESHULAM O, GHOSH A, GOTLIB N, STERN C, YUAN SF, XIA FN, NAVEH D

Complementary Schottky diode formation with carbon buffer and p-doped single layer graphene on intrinsic SiC via fluorine intercalation

CARBON

LEE SY, KIM J, AHN S, JEON KJ, SEO H

Silicon- and oxygen-codoped graphene from polycarbosilane and its application in graphene/n-type silicon photodetectors

APPLIED SURFACE SCIENCE

GUO HA, JOU S, MAO TZ, HUANG BR, HUANG YT, YU HC, HSIEH YF, CHEN CC

High Responsivity and Quantum Efficiency of Graphene/Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions

ACS PHOTONICS

RIAZIMEHR S, KATARIA S, GONZALEZMEDINA JM, WAGNER S, SHAYGAN M, SUCKOW S, RUIZ FG, ENGSTROM O, GODOY A, LEMME MC