国家/地区 Russia（2）
关键词
出版物
出版时间 2019（2）
机构 IOFFE INST（2）
作者 ELISEYEV IA（2）

Investigation of the Hydrogen Etching Effect of the SiC Surface on the Formation of Graphene Films

TECHNICAL PHYSICS

LEBEDEV SP, BARASH IS, ELISEYEV IA, DEMENTEV PA, LEBEDEV AA, BULAT PV

Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC

SEMICONDUCTORS

ELISEYEV IA, DAVYDOV VY, SMIRNOV AN, NESTOKLON MO, DEMENTEV PA, LEBEDEV SP, LEBEDEV AA, ZUBOV AV, MATHEW S, PEZOLDT J, BOKAI KA, USACHOV DY