国家/地区 China（4）
关键词 SCHOTTKY BARRIER HEIGHT（4）
出版物
出版时间 2020（4）
机构 GUIZHOU UNIV.（2）
作者 DING Z（2） LIU XF（2） LUO ZJ（2） LV B（2）

Van der Waals heterostructure of graphene and As2S3: Tuning the Schottky barrier height by vertical strain

JOURNAL OF CRYSTAL GROWTH

LIU XF, LV B, DING Z, LUO ZJ

Impact of graphene interlayer on performance parameters of sandwich structure Pt/GaN Schottky barrier diodes

JOURNAL OF PHYSICS DAPPLIED PHYSICS

RAN JX, LIU BY, JI XL, FARIZA A, LIU ZT, WANG JX, GAO P, WEI TB

The External Electric Field-Induced Tunability of the Schottky Barrier Height in Graphene/AlN Interface: A Study by First-Principles

NANOMATERIALS

LIU XF, ZHANG ZC, LV B, DING Z, LUO ZJ

Ultrathin MoOx/Graphene Hybrid Field Effect Transistor Sensors Prepared Simply by a Shadow Mask Approach for Selective ppb-Level NH3 Sensing with Simultaneous Superior Response and Fast Recovery

ADVANCED MATERIALS INTERFACES

FALAK A, TIAN Y, YAN LQ, XU LH, SONG ZW, HU HF, DONG FL, ADAMU BI, ZHAO M, CHEN PP, WANG HF, CHU WG