国家/地区 Usa（6）
关键词 QUANTIZED HALL RESI.（2） QUANTUM HALL EFFECT（2）
出版物 AIP ADVANCES（2） IEEE TRANSACTIONS O.（2）
出版时间 2020（6）
机构 NIST（5）
作者 RIGOSI AF（6）

Comparison Between Graphene and GaAs Quantized Hall Devices With a Dual Probe

IEEE TRANSACTIONS ON INSTRUMENTATION MEASUREMENT

PAYAGALA SU, RIGOSI AF, PANNA AR, POLLAROLO A, KRUSKOPF M, SCHLAMMINGER S, JARRETT DG, BROWN R, ELMQUIST RE, BROWN D, NEWELL DB

Analysing quantized resistance behaviour in graphene Corbino p-n junction devices

JOURNAL OF PHYSICS DAPPLIED PHYSICS

LIU CI, SCALETTA DS, PATEL DK, KRUSKOPF M, LEVY A, HILL HM, RIGOSI AF

Comparison Between NIST Graphene and AIST GaAs Quantized Hall Devices

IEEE TRANSACTIONS ON INSTRUMENTATION MEASUREMENT

OE T, RIGOSI AF, KRUSKOPF M, WU BY, LEE HY, YANG YF, ELMQUIST RE, KANEKO NH, JARRETT DG

Analytical determination of atypical quantized resistances in graphene p-n junctions

PHYSICA BCONDENSED MATTER

RIGOSI AF, MARZANO M, LEVY A, HILL HM, PATEL DK, KRUSKOPF M, JIN H, ELMQUIST RE, NEWELL DB

Quantum Hall resistance dartboards using graphene p-n junction devices with Corbino geometries

AIP ADVANCES

LIU CI, PATEL DK, MARZANO M, KRUSKOPF M, HILL HM, RIGOSI AF

Accessing ratios of quantized resistances in graphene p-n junction devices using multiple terminals

AIP ADVANCES

PATEL D, MARZANO M, LIU CI, HILL HM, KRUSKOPF M, JIN H, HU JN, NEWELL DB, LIANG CT, ELMQUIST R, RIGOSI AF