国家/地区 China（2）
关键词 CONTACT RESISTANCE（7）
出版物 IEEE ELECTRON DEVIC.（3） IEEE TRANSACTIONS O.（2）
出版时间 2023（7）
机构
作者 KUMAR J（2） MEERSHA A（2） MISHRA A（2） SHRIVASTAVA .（2）
VARIAR HB（2）

Vacancy Assisted Bilayer Graphene Contact for Monolayer Graphene Channel Devices

IEEE ELECTRON DEVICE LETTERS

MEERSHA A, KUMAR J, MISHRA A, VARIAR HB, SHRIVASTAVA M

Vacancy Assisted Bilayer Graphene Contact for Monolayer Graphene Channel Devices

IEEE ELECTRON DEVICE LETTERS

MEERSHA A, KUMAR J, MISHRA A, VARIAR HB, SHRIVASTAVA M

A Parameter Extraction Methodology for Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

JEPPSON K

Performance Improvement of MoS2-Based MOSFETs With Graphene Quantum Dots Pretreatment Technology

IEEE TRANSACTIONS ON ELECTRON DEVICES

YANG K, LIU HX, WANG SL, CHONG C, HAN T

A High-Temperature Accelerometer with Excellent Performance Based on the Improved Graphene Aerogel

ACS APPLIED MATERIALS INTERFACES

WANG ZB, ZHOU WY, XIAO ZJ, YAO QR, XIA XG, MEI J, ZHANG D, CHEN PH, LI SQ, WANG YC, RAO GH, XIE SS

Characteristics of Epitaxial Graphene on SiC/Si Substrates in the Radio Frequency Spectrum

IEEE ELECTRON DEVICE LETTERS

KATZMAREK DA, YANG Y, GHASEMIAN MB, KALANTARZADEH K, ZIOLKOWSKI RW, IACOPI F

Effective Schottky barrier height and interface trap density reduction engineering using 2-dimensional reduced graphene oxide interlayer for metal-interlayer-semiconductor contact structure

JOURNAL OF ALLOYS COMPOUNDS

SONG S, KIM SH, KIM SG, HAN KH, KIM HJ, YU HY