国家/地区 Korea（5）
关键词 DOPING（2） HUBBARD BAND（2） INTERCALATION（2）
QUASIFREESTANDING E.（2）
出版物 CARBON（3）
出版时间 2016（2）
机构 CHONBUK NATL UNIV（5）
作者 SEO JM（5）

Effects of two kinds of intercalated In films on quasi-free-standing monolayer graphene formed above SiC(0001)

CARBON

KIM H, TSOGTBAATAR N, TUVDENDORJ B, LKHAGVASUREN A, SEO JM

Doping modulation of quasi-free-standing monolayer graphene formed on SiC(0001) through Sn1-xGex intercalation

CARBON

KIM H, DUGERJAV O, LKHAGVASUREN A, SEO JM

Origin of ambipolar graphene doping induced by the ordered Ge film intercalated on SiC(0001)

CARBON

KIM HD, DUGERJAV O, LKHAGVASUREN A, SEO JM

Charge neutrality of quasi-free-standing monolayer graphene induced by the intercalated Sn layer

JOURNAL OF PHYSICS DAPPLIED PHYSICS

KIM H, DUGERJAV O, LKHAGVASUREN A, SEO JM

Bifunctional effects of the ordered Si atoms intercalated between quasi-free-standing epitaxial graphene and SiC(0001): graphene doping and substrate band bending

NEW JOURNAL OF PHYSICS

KIM H, DUGERJAV O, ARVISBAATAR A, SEO JM