国家/地区 Usa（12）
关键词 GRAPHENE（4） FET（3） BORON NITRIDE（2）
CVD（2） FLEXIBLE ELECTRONIC（2） RADIO FREQUENCY（2）
出版物 NANO LETTERS（3） NATURE PHYSICS（3） NATURE NANOTECHNOLO.（2）
出版时间 2012（3） 2013（3） 2011（2） 2015（2）
机构 COLUMBIA UNIV（12）
作者 SHEPARD KL（12）

Graphene Field-Effect Transistors Based on Boron-Nitride Dielectrics

PROCEEDINGS OF THE IEEE

MERIC I, DEAN CR, PETRONE N, WANG L, HONE J, KIM P, SHEPARD KL

Evidence for a spin phase transition at charge neutrality in bilayer graphene

NATURE PHYSICS

MAHER P, DEAN CR, YOUNG AF, TANIGUCHI T, WATANABE K, SHEPARD KL, HONE J, KIM P

Graphene Field-Effect Transistors with Gigahertz-Frequency Power Gain on Flexible Substrates

NANO LETTERS

PETRONE N, MERIC I, HONE J, SHEPARD KL

Spin and valley quantum Hall ferromagnetism in graphene

NATURE PHYSICS

YOUNG AF, DEAN CR, WANG L, REN H, CADDENZIMANSKY P, WATANABE K, TANIGUCHI T, HONE J, SHEPARD KL, KIM P

Electronic compressibility of layer-polarized bilayer graphene

PHYSICAL REVIEW B

YOUNG AF, DEAN CR, MERIC I, SORGENFREI S, REN H, WATANABE K, TANIGUCHI T, HONE J, SHEPARD KL, KIM P

Chemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated Graphene

NANO LETTERS

PETRONE N, DEAN CR, MERIC I, VAN DER ZANDE AM, HUANG PY, WANG L, MULLER D, SHEPARD KL, HONE J

Multicomponent fractional quantum Hall effect in graphene

NATURE PHYSICS

DEAN CR, YOUNG AF, CADDENZIMANSKY P, WANG L, REN H, WATANABE K, TANIGUCHI T, KIM P, HONE J, SHEPARD KL

Channel Length Scaling in Graphene Field-Effect Transistors Studied with Pulsed Current-Voltage Measurements

NANO LETTERS

MERIC I, DEAN CR, YOUNG AF, BAKLITSKAYA N, TREMBLAY NJ, NUCKOLLS C, KIM P, SHEPARD KL

Boron nitride substrates for high-quality graphene electronics

NATURE NANOTECHNOLOGY

DEAN CR, YOUNG AF, MERIC I, LEE C, WANG L, SORGENFREI S, WATANABE K, TANIGUCHI T, KIM P, SHEPARD KL, HONE J

Current saturation in zero-bandgap, topgated graphene field-effect transistors

NATURE NANOTECHNOLOGY

MERIC I, HAN MY, YOUNG AF, OZYILMAZ B, KIM P, SHEPARD KL