国家/地区 Usa（6）
关键词 EPITAXIAL GRAPHENE（3） NANOELECTRONIC（2）
出版物 JOURNAL OF PHYSICS .（2） NANO LETTERS（2）
出版时间 2014（3） 2012（2）
机构 GEORGIA INST TECHNOL（6）
作者 GUO ZL（6）

Planar Edge Schottky Barrier-Tunneling Transistors Using Epitaxial Graphene/SiC Junctions

NANO LETTERS

KUNC J, HU YK, PALMER J, GUO ZL, HANKINSON J, GAMAL SH, BERGER C, DE HEER WA

Controlled epitaxial graphene growth within removable amorphous carbon corrals

APPLIED PHYSICS LETTERS

PALMER J, KUNC J, HU YK, HANKINSON J, GUO ZL, BERGER C, DE HEER WA

Wafer bonding solution to epitaxial graphene-silicon integration

JOURNAL OF PHYSICS DAPPLIED PHYSICS

DONG R, GUO ZL, PALMER J, HU YK, RUAN M, HANKINSON J, KUNC J, BHATTACHARYA SK, BERGER C, DE HEER WA

Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors

NANO LETTERS

GUO ZL, DONG R, CHAKRABORTY PS, LOURENCO N, PALMER J, HU YK, RUAN M, HANKINSON J, KUNC J, CRESSLER JD, BERGER C, DE HEER WA

Epitaxial graphene on silicon carbide: Introduction to structured graphene

MRS BULLETIN

RUAN M, HU YK, GUO ZL, DONG R, PALMER J, HANKINSON J, BERGER C, DE HEER WA

Structured epitaxial graphene: growth and properties

JOURNAL OF PHYSICS DAPPLIED PHYSICS

HU YK, RUAN M, GUO ZL, DONG R, PALMER J, HANKINSON J, BERGER C, DE HEER WA