国家/地区 Usa（4）
关键词
出版物 PHYSICAL REVIEW B（2）
出版时间 2011（2）
机构 GEORGIA INST TECHNOL（4）
作者 ZANGWILL A（4）

Model and simulations of the epitaxial growth of graphene on non-planar 6H-SiC surfaces

JOURNAL OF PHYSICS DAPPLIED PHYSICS

MING F, ZANGWILL A

Model for the epitaxial growth of graphene on 6H-SiC(0001)

PHYSICAL REVIEW B

MING F, ZANGWILL A

Novel Growth Mechanism of Epitaxial Graphene on Metals

NANO LETTERS

ZANGWILL A, VVEDENSKY DD

Step-edge instability during epitaxial growth of graphene from SiC(0001)

PHYSICAL REVIEW B

BOROVIKOV V, ZANGWILL A