国家/地区 Usa（10）
关键词
出版物 JOURNAL OF PHYSICS DAPPLIED PHYSICS（10）
出版时间 2012（6） 2010（2）
机构 GEORGIA INST TECHNOL（10）
作者 BERGER C（5） DE HEER WA（5） HANKINSON J（3） PALMER J（3）
RUAN M（3） CONRAD EH（2） DONG R（2） FIRST PN（2）
GUO ZL（2） HICKS J（2） HU YK（2） SPRINKLE M（2）

Wafer bonding solution to epitaxial graphene-silicon integration

JOURNAL OF PHYSICS DAPPLIED PHYSICS

DONG R, GUO ZL, PALMER J, HU YK, RUAN M, HANKINSON J, KUNC J, BHATTACHARYA SK, BERGER C, DE HEER WA

Diffusion of Si and C atoms on and between graphene layers

JOURNAL OF PHYSICS DAPPLIED PHYSICS

XIAN LD, CHOU MY

Epitaxial graphene

JOURNAL OF PHYSICS DAPPLIED PHYSICS

DE HEER WA, BERGER C

The structure of graphene grown on the SiC (000(1)over-bar) surface

JOURNAL OF PHYSICS DAPPLIED PHYSICS

HICKS J, SHEPPERD K, WANG F, CONRAD EH

Structured epitaxial graphene: growth and properties

JOURNAL OF PHYSICS DAPPLIED PHYSICS

HU YK, RUAN M, GUO ZL, DONG R, PALMER J, HANKINSON J, BERGER C, DE HEER WA

Effective theory of rotationally faulted multilayer graphene-the local limit

JOURNAL OF PHYSICS DAPPLIED PHYSICS

KINDERMANN M, FIRST PN

Model and simulations of the epitaxial growth of graphene on non-planar 6H-SiC surfaces

JOURNAL OF PHYSICS DAPPLIED PHYSICS

MING F, ZANGWILL A

Epitaxial graphene electronic structure and transport

JOURNAL OF PHYSICS DAPPLIED PHYSICS

DE HEER WA, BERGER C, WU XS, SPRINKLE M, HU Y, RUAN M, STROSCIO JA, FIRST PN, HADDON R, PIOT B, FAUGERAS C, POTEMSKI M, MOON JS

Multilayer epitaxial graphene grown on the SiC (000(1)over-bar) surface; structure and electronic properties

JOURNAL OF PHYSICS DAPPLIED PHYSICS

SPRINKLE M, HICKS J, TEJEDA A, TALEBIBRAHIMI A, LE FEVRE P, BERTRAN F, TINKEY H, CLARK MC, SOUKIASSIAN P, MARTINOTTI D, HASS J, CONRAD EH

Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks

JOURNAL OF PHYSICS DAPPLIED PHYSICS

PUYBARET R, HANKINSON J, PALMER J, BOUVIER C, OUGAZZADEN A, VOSS PL, BERGER C, DE HEER WA