国家/地区 Usa（3）
关键词
出版物
出版时间 2008（3）
机构 GEORGIA INST TECHNOL（3）
作者 CONRAD EH（3）

Interface structure of epitaxial graphene grown on 4H-SiC(0001)

PHYSICAL REVIEW B

HASS J, MILLANOTOYA JE, FIRST PN, CONRAD EH

The growth and morphology of epitaxial multilayer graphene

JOURNAL OF PHYSICSCONDENSED MATTER

HASS J, DE HEER WA, CONRAD EH

Why multilayer graphene on 4H-SiC(000(1)over-bar) behaves like a single sheet of graphene

PHYSICAL REVIEW LETTERS

HASS J, VARCHON F, MILLANOTOYA JE, SPRINKLE M, SHARMA N, DE HEER WA, BERGER C, FIRST PN, MAGAUD L, CONRAD EH