国家/地区 Usa（4）
关键词
出版物 JOURNAL OF VACUUM S.（2）
出版时间 2008（4）
机构 GEORGIA INST TECHNOL（4）
作者 FIRST PN（4）

Interface structure of epitaxial graphene grown on 4H-SiC(0001)

PHYSICAL REVIEW B

HASS J, MILLANOTOYA JE, FIRST PN, CONRAD EH

Atomic-scale investigation of graphene formation on 6H-SiC(0001)

JOURNAL OF VACUUM SCIENCE TECHNOLOGY A

GUISINGER NP, RUTTER GM, CRAIN JN, HEILIGER C, FIRST PN, STROSCIO JA

Structural and electronic properties of bilayer epitaxial graphene

JOURNAL OF VACUUM SCIENCE TECHNOLOGY A

RUTTER GM, CRAIN JN, GUISINGER NP, FIRST PN, STROSCIO JA

Why multilayer graphene on 4H-SiC(000(1)over-bar) behaves like a single sheet of graphene

PHYSICAL REVIEW LETTERS

HASS J, VARCHON F, MILLANOTOYA JE, SPRINKLE M, SHARMA N, DE HEER WA, BERGER C, FIRST PN, MAGAUD L, CONRAD EH