国家/地区 Korea（5）
关键词
出版物 APPLIED PHYSICS LETTERS（5）
出版时间 2013（2）
机构 GWANGJU INST SCI TECHNOL（5）
作者 LEE YG（5）

Quantitative analysis of interfacial reactions at a graphene/SiO2 interface using the discharge current analysis method

APPLIED PHYSICS LETTERS

JUNG U, LEE YG, KANG CG, LEE S, LEE BH

Correlation between the hysteresis and the initial defect density of graphene

APPLIED PHYSICS LETTERS

CHO C, LEE YG, JUNG U, KANG CG, LIM S, HWANG HJ, CHOI H, LEE BH

Influence of extrinsic factors on accuracy of mobility extraction in graphene metal-oxide-semiconductor field effect transistors

APPLIED PHYSICS LETTERS

LEE YG, KIM YJ, KANG CG, CHO C, LEE S, HWANG HJ, JUNG U, LEE BH

Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics

APPLIED PHYSICS LETTERS

LEE YG, KANG CG, JUNG UJ, KIM JJ, HWANG HJ, CHUNG HJ, SEO S, CHOI R, LEE BH

Contact resistance improvement by the modulation of peripheral length to area ratio of graphene contact pattern

APPLIED PHYSICS LETTERS

CHO C, LEE SK, NOH JW, PARK W, LEE S, LEE YG, HWANG HJ, KANG CG, HAM MH, LEE BH