国家/地区 China（7）
关键词 CHEMICAL VAPOR DEPO.（2） FIELDEFFECT TRANSIS.（2） GRAPHENE（2）
出版物
出版时间 2016（3） 2017（2）
机构 HEBEI SEMICOND RES INST（7）
作者 WANG JJ（7）

Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0001) substrate

APPLIED SURFACE SCIENCE

LIU QB, YU C, HE ZZ, GU GD, WANG JJ, ZHOU CJ, GUO JC, GAO XD, FENG ZH

An ultra clean self-aligned process for high maximum oscillation frequency graphene transistors

CARBON

FENG ZH, YU C, LI J, LIU QB, HE ZZ, SONG XB, WANG JJ, CAI SJ

Improvement of the Frequency Characteristics of Graphene Field-Effect Transistors on SiC Substrate

IEEE ELECTRON DEVICE LETTERS

YU C, HE ZZ, SONG XB, LIU QB, HAN TT, DUN SB, WANG JJ, ZHOU CJ, GUO JC, LV YJ, FENG ZH, CAI SJ

High-frequency noise characterization of graphene field effect transistors on SiC substrates

APPLIED PHYSICS LETTERS

YU C, HE ZZ, SONG XB, LIU QB, DUN SB, HAN TT, WANG JJ, ZHOU CJ, GUO JC, LV YJ, CAI SJ, FENG ZH

Comparative Study of Monolayer and Bilayer Epitaxial Graphene Field-Effect Transistors on SiC Substrates

CHINESE PHYSICS LETTERS

HE ZZ, YANG KW, YU C, LIU QB, WANG JJ, SONG XB, HAN TT, FENG ZH, CAI SJ

High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate

CHINESE PHYSICS B

HE ZZ, YANG KW, YU C, LIU QB, WANG JJ, LI J, LU WL, FENG ZH, CAI SJ

Epitaxial Graphene on Sapphire Substrate by Chemical Vapor Deposition

ACTA PHYSICOCHIMICA SINICA

LIU QB, YU C, HE ZZ, WANG JJ, LI J, LU WL, FENG ZH