国家/地区 Singapore（2）
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出版物
出版时间
机构 HEBEI UNIV（3）
作者 ZHANG YY（3）

Improving Zr0.5Hf0.5O2-based charge-trapped performance by graphene oxide quantum dots

FUNCTIONAL MATERIALS LETTERS

WANG H, DING BF, TIAN XY, ZHAO R, ZHANG YY, LU C, REN DL, YAN XB

A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory With Enhanced Memory Window and Data Retention

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

WANG H, YAN XB, JIA XL, ZHANG ZC, HO CH, LU C, ZHANG YY, YANG T, ZHAO JH, ZHOU ZY, ZHAO ML, REN DL

Highly improved performance in Zr0.5Hf0.5O2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory

JOURNAL OF MATERIALS CHEMISTRY C

YAN XB, ZHANG L, YANG YQ, ZHOU ZY, ZHAO JH, ZHANG YY, LIU Q, CHEN JS