国家/地区 Japan（4）
关键词
出版物 JAPANESE JOURNAL OF.（3）
出版时间 2009（4）
机构 HOKKAIDO UNIV（4）
作者 OTSUJI T（4）

Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Source and Drain Structures for Suppressing Ambipolar Characteristics of Graphene Field-Effect Transistors

APPLIED PHYSICS EXPRESS

SANO E, OTSUJI T

Theoretical Evaluation of Channel Structure in Graphene Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Performance Prediction of Graphene-Channel Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T