国家/地区 China（5）
关键词
出版物 PHYSICAL REVIEW B（2）
出版时间 2017（3）
机构 HONG KONG UNIV SCI TECHNOL（5）
作者 PAN J（5）

Negative correlation between charge carrier density and mobility fluctuations in graphene

PHYSICAL REVIEW B

LU JM, PAN J, YEH SS, ZHANG HJ, ZHENG Y, CHEN QH, WANG Z, ZHANG B, LIN JJ, SHENG P

Berry Curvature and Nonlocal Transport Characteristics of Antidot Graphene

PHYSICAL REVIEW X

PAN J, ZHANG T, ZHANG HJ, ZHANG B, DONG Z, SHENG P

Concurrent fast growth of sub-centimeter single-crystal graphene with controlled nucleation density in a confined channel

NANOSCALE

WU RZ, PAN J, OU XW, ZHANG QC, DING Y, SHENG P, LUO ZT

Regulating Top-Surface Multilayer/Single-Crystal Graphene Growth by "Gettering" Carbon Diffusion at Backside of the Copper Foil

ADVANCED FUNCTIONAL MATERIALS

ABIDI IH, LIU YY, PAN J, TYAGI A, ZHUANG MH, ZHANG QC, CAGANG AA, WENG LT, SHENG P, GODDARD WA, LUO ZT

Spatial variation of charge carrier density in graphene under a large bias current

PHYSICAL REVIEW B

PAN J, ZHANG HJ, ZHENG Y, ZHANG B, ZHANG T, SHENG P