国家/地区 Russia（11）
关键词 GRAPHENE（4） 4HSIC（2） GRAPHENE ON SILICON.（2）
INTERCALATION（2） RAMAN SPECTROSCOPY（2） SILICIDE（2）
出版物 PHYSICS OF THE SOLI.（4） SEMICONDUCTORS（3）
出版时间 2018（4） 2020（4） 2019（3）
机构 IOFFE INST（11）
作者 DAVYDOV VY（11）

Detection of lysine molecular ions in solution gated field effect transistors based on unmodified graphene

JOURNAL OF APPLIED PHYSICS

BUTKO AV, BUTKO VY, LEBEDEV SP, LEBEDEV AA, DAVYDOV VY, ELISEYEV IA, KUMZEROV YA

Raman Studies of Graphene Films Grown on 4H-SiC Subjected to Deposition of Ni

SEMICONDUCTORS

ELISEYEV IA, DAVYDOV VY, SMIRNOV AN, BELOV SV, ZUBOV AV, LEBEDEV SP, LEBEDEV AA

Formation of Iron Silicides Under Graphene Grown on the Silicon Carbide Surface

PHYSICS OF THE SOLID STATE

GREBENYUK GS, ELISEEV IA, LEBEDEV SP, LOBANOVA EY, SMIRNOV DA, DAVYDOV VY, LEBEDEV AA, PRONIN II

Intercalation Synthesis of Cobalt Silicides under Graphene Grown on Silicon Carbide

PHYSICS OF THE SOLID STATE

GREBENYUK GS, ELISEEV IA, LEBEDEV SP, LOBANOVA EY, SMIRNOV DA, DAVYDOV VY, LEBEDEV AA, PRONIN II

Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC

SEMICONDUCTORS

ELISEYEV IA, DAVYDOV VY, SMIRNOV AN, NESTOKLON MO, DEMENTEV PA, LEBEDEV SP, LEBEDEV AA, ZUBOV AV, MATHEW S, PEZOLDT J, BOKAI KA, USACHOV DY

MoSe2/graphene/6H-SiC heterojunctions: energy band diagram and photodegradation

SEMICONDUCTOR SCIENCE TECHNOLOGY

BORODIN BR, BENIMETSKIY FA, DUNAEVSKIY MS, SHAROV VA, SMIRNOV AN, DAVYDOV VY, LAHDERANTA E, LEBEDEV SP, LEBEDEV AA, ALEKSEEV PA

Cobalt Intercalation of Graphene on Silicon Carbide

PHYSICS OF THE SOLID STATE

GREBENYUK GS, LOBANOVA EY, SMIRNOV DA, ELISEEV IA, ZUBOV AV, SMIRNOV AN, LEBEDEV SP, DAVYDOV VY, LEBEDEV AA, PRONIN II

Growth of III-N/graphene heterostructures in single vapor phase epitaxial process

JOURNAL OF CRYSTAL GROWTH

LUNDIN WV, ZAVARIN EE, SAKHAROV AV, ZAKHEIM DA, DAVYDOV VY, SMIRNOV AN, ELISEYEV IA, YAGOVKINA MA, BRUNKOV PN, LUNDINA EY, MARKOV LK, TSATSULNIKOV AF

High Quality Graphene Grown by Sublimation on 4H-SiC (0001)

SEMICONDUCTORS

LEBEDEV AA, DAVYDOV VY, USACHOV DY, LEBEDEV SP, SMIRNOV AN, ELISEYEV IA, DUNAEVSKIY MS, GUSHCHINA EV, BOKAI KA, PEZOLDT J

Intercalation of Iron Atoms under Graphene Formed on Silicon Carbide

PHYSICS OF THE SOLID STATE

GOMOYUNOVA MV, GREBENYUK GS, DAVYDOV VY, ERMAKOV IA, ELISEYEV IA, LEBEDEV AA, LEBEDEV SP, LOBANOVA EY, SMIRNOV AN, SMIRNOV DA, PRONIN II