国家/地区 Germany（11）
关键词
出版物 PHYSICAL REVIEW B（3） APPLIED PHYSICS LET.（2） NANO LETTERS（2）
出版时间 2008（4） 2009（3） 2010（3）
机构 MAX PLANCK INST FESTKORPERFORSCH（11）
作者 RIEDL C（11）

Large-area homogeneous quasifree standing epitaxial graphene on SiC(0001): Electronic and structural characterization

PHYSICAL REVIEW B

FORTI S, EMTSEV KV, COLETTI C, ZAKHAROV AA, RIEDL C, STARKE U

Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation

JOURNAL OF PHYSICS DAPPLIED PHYSICS

RIEDL C, COLETTI C, STARKE U

Electronic decoupling of an epitaxial graphene monolayer by gold intercalation

PHYSICAL REVIEW B

GIERZ I, SUZUKI T, WEITZ RT, LEE DS, KRAUSS B, RIEDL C, STARKE U, HOCHST H, SMET JH, AST CR, KERN K

Charge neutrality and band-gap tuning of epitaxial graphene on SiC by molecular doping

PHYSICAL REVIEW B

COLETTI C, RIEDL C, LEE DS, KRAUSS B, PATTHEY L, VON KLITZING K, SMET JH, STARKE U

Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation

PHYSICAL REVIEW LETTERS

RIEDL C, COLETTI C, IWASAKI T, ZAKHAROV AA, STARKE U

Low temperature growth of epitaxial graphene on SiC induced by carbon evaporation

APPLIED PHYSICS LETTERS

ALTEMIMY A, RIEDL C, STARKE U

Epitaxial graphene on SiC(0001) and SiC(000(1)over-bar): from surface reconstructions to carbon electronics

JOURNAL OF PHYSICSCONDENSED MATTER

STARKE U, RIEDL C

Raman Spectra of Epitaxial Graphene on SiC and of Epitaxial Graphene Transferred to SiO2

NANO LETTERS

LEE DS, RIEDL C, KRAUSS B, VON KLITZING K, STARKE U, SMET JH

Atomic Hole Doping of Graphene

NANO LETTERS

GIERZ I, RIEDL C, STARKE U, AST CR, KERN K

Spatial modulation of the Dirac gap in epitaxial graphene

SURFACE SCIENCE

VITALI L, RIEDL C, OHMANN R, BRIHUEGA I, STARKE U, KERN K