国家/地区 Australia（8）
关键词 EPITAXIAL GRAPHENE（2） GRAPHENE（2） SIC（2）
出版物 CARBON（4） NANOTECHNOLOGY（4）
出版时间 2015（2） 2016（2）
机构 QUEENSLAND UNIV TECHNOL（8）
作者 IACOPI F（8）

Electron effective attenuation length in epitaxial graphene on SiC

NANOTECHNOLOGY

AMJADIPOUR M, MACLEOD J, LIPTONDUFFIN J, TADICH A, BOECKL JJ, IACOPI F, MOTTA N

Quasi free-standing epitaxial graphene fabrication on 3C-SiC/Si(111)

NANOTECHNOLOGY

AMJADIPOUR M, TADICH A, BOECKL JJ, LIPTONDUFFIN J, MACLEOD J, IACOPI F, MOTTA N

Evolution of epitaxial graphene layers on 3C SiC/Si (111) as a function of annealing temperature in UHV

CARBON

GUPTA B, NOTARIANNI M, MISHRA N, SHAFIEI M, IACOPI F, MOTTA N

Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): reducing milling damage

NANOTECHNOLOGY

AMJADIPOUR M, MACLEOD J, LIPTONDUFFIN J, IACOPI F, MOTTA N

Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing

NANOTECHNOLOGY

GUPTA B, DI BERNARDO I, MONDELLI P, DELLA PIA A, BETTI MG, IACOPI F, MARIANI C, MOTTA N

Time evolution of graphene growth on SiC as a function of annealing temperature

CARBON

ZAROTTI F, GUPTA B, IACOPI F, SGARLATA A, TOMELLINI M, MOTTA N

The transition from 3C SiC(111) to graphene captured by Ultra High Vacuum Scanning Tunneling Microscopy

CARBON

GUPTA B, PLACIDI E, HOGAN C, MISHRA N, IACOPI F, MOTTA N

Evolution of epitaxial graphene layers on 3C SiC/Si (1 1 1) as a function of annealing temperature in UHV (vol 68, pg 563, 2014)

CARBON

GUPTA B, NOTARIANNI M, MISHRA N, SHAFIEI M, IACOPI F, MOTTA N