国家/地区 Russia（14）
关键词 GRAPHENE（2） PLASMON（2）
出版物 APPLIED PHYSICS LET.（3） JOURNAL OF APPLIED .（2） PHYSICAL REVIEW B（2）
出版时间 2013（4） 2015（3） 2012（2）
机构 RUSSIAN ACAD SCI（14）
作者 OTSUJI T（14）

Terahertz plasmon-emitting graphene-channel transistor

OPTOELECTRONICS REVIEW

DUBINOV AA, ALESHKIN VY, MOROZOV SV, RYZHII V, OTSUJI T

All-graphene field-effect transistor based on lateral tunnelling

JOURNAL OF PHYSICS DAPPLIED PHYSICS

SVINTSOV D, VYURKOV V, ORLIKOVSKY A, RYZHII V, OTSUJI T

Hydrodynamic electron transport and nonlinear waves in graphene

PHYSICAL REVIEW B

SVINTSOV D, VYURKOV V, RYZHII V, OTSUJI T

Graphene surface emitting terahertz laser: Diffusion pumping concept

APPLIED PHYSICS LETTERS

DAVOYAN AR, MOROZOV MY, POPOV VV, SATOU A, OTSUJI T

Amplification and lasing of terahertz radiation by plasmons in graphene with a planar distributed Bragg resonator

JOURNAL OF OPTICS

POPOV VV, POLISCHUK OV, NIKITOV SA, RYZHII V, OTSUJI T, SHUR MS

Voltage-controlled surface plasmon-polaritons in double graphene layer structures

JOURNAL OF APPLIED PHYSICS

SVINTSOV D, VYURKOV V, RYZHII V, OTSUJI T

Plasmonic terahertz lasing in an array of graphene nanocavities

PHYSICAL REVIEW B

POPOV VV, POLISCHUK OV, DAVOYAN AR, RYZHII V, OTSUJI T, SHUR MS

Hydrodynamic model for electron-hole plasma in graphene

JOURNAL OF APPLIED PHYSICS

SVINTSOV D, VYURKOV V, YURCHENKO S, OTSUJI T, RYZHII V

Effect of "Mexican Hat" on Graphene Bilayer Field-Effect Transistor Characteristics

JAPANESE JOURNAL OF APPLIED PHYSICS

SVINTSOV D, VYURKOV V, RYZHII V, OTSUJI T

Plasmonic amplification of terahertz radiation in a periodic graphene structure with the carrier injection

APPLIED PHYSICS LETTERS

POLISCHUK OV, FATEEV DV, OTSUJI T, POPOV VV