国家/地区 Japan（9）
关键词
出版物 JAPANESE JOURNAL OF APPLIED PHYSICS（9）
出版时间 2010（3） 2011（3） 2016（2）
机构 TOHOKU UNIV（9）
作者 SUEMITSU T（9）

Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device

JAPANESE JOURNAL OF APPLIED PHYSICS

EL MOUTAOUAKIL A, KANG HC, HANDA H, FUKIDOME H, SUEMITSU T, SANO E, SUEMITSU M, OTSUJI T

Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications

JAPANESE JOURNAL OF APPLIED PHYSICS

JUNG MH, HANDA H, TAKAHASHI R, FUKIDOME H, SUEMITSU T, OTSUJI T, SUEMITSU M

Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation

JAPANESE JOURNAL OF APPLIED PHYSICS

JUNG MH, HANDA H, TAKAHASHI R, FUKIDOME H, SUEMITSU T, OTSUJI T, SUEMITSU M

Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates

JAPANESE JOURNAL OF APPLIED PHYSICS

KANG HC, OLACVAW R, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, FUKIDOME H, SUEMITSU M, OTSUJI T

Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates (vol 49, 04DF17, 2010)

JAPANESE JOURNAL OF APPLIED PHYSICS

KANG HC, OLACVAW R, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, FUKIDOME H, SUEMITSU M, OTSUJI T

Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate

JAPANESE JOURNAL OF APPLIED PHYSICS

OLACVAW R, KANG HC, KARASAWA H, MIYAMOTO Y, HANDA H, FUKIDOME H, SUEMITSU T, SUEMITSU M, OTSUJI T

Solution-based formation of high-quality gate dielectrics on epitaxial graphene by microwave-assisted annealing

JAPANESE JOURNAL OF APPLIED PHYSICS

KIM KS, PARK GH, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M

Solution-processed Al2O3 gate dielectrics for graphene field-effect transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M

High-performance self-aligned graphene transistors fabricated using contamination-and defect-free process

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M