国家/地区 Japan（11）
关键词
出版物 PHYSICAL REVIEW B（5） JAPANESE JOURNAL OF.（2）
出版时间 2019（3） 2011（2） 2014（2） 2015（2）
机构 TOKYO INST TECHNOL（11）
作者 SAITO S（11）

Electronic structure and scanning tunneling microscopy images of heterostructures consisting of graphene and carbon-doped hexagonal boron nitride layers

PHYSICAL REVIEW B

HAGA T, FUJIMOTO Y, SAITO S

STM visualization of carbon impurities in sandwich structures consisting of hexagonal boron nitride and graphene

JAPANESE JOURNAL OF APPLIED PHYSICS

HAGA T, FUJIMOTO Y, SAITO S

Effects of gas adsorption on the stabilities, electronic structures, and scanning tunneling microscopy of graphene monolayers doped with B or N

JAPANESE JOURNAL OF APPLIED PHYSICS

FUJIMOTO Y, SAITO S

Hydrogen adsorption and anomalous electronic properties of nitrogen-doped graphene

JOURNAL OF APPLIED PHYSICS

FUJIMOTO Y, SAITO S

Lattice matching and electronic structure of finite-layer graphene/h-BN thin films

PHYSICAL REVIEW B

SAKAI Y, SAITO S, COHEN ML

Electronic Properties of Graphene/h-BN Bilayer Superlattices

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN

SAKAI Y, SAITO S

Formation, stabilities, and electronic properties of nitrogen defects in graphene

PHYSICAL REVIEW B

FUJIMOTO Y, SAITO S

Electronic structure and stability of layered superlattice composed of graphene and boron nitride monolayer

PHYSICAL REVIEW B

SAKAI Y, KORETSUNE T, SAITO S

Probing a divergent van Hove singularity of graphene with a Ca2N support: A layered electride as a solid-state dopant

PHYSICAL REVIEW B

INOSHITA T, TSUKADA M, SAITO S, HOSONO H

In-Plane Electric Polarization of Bilayer Graphene Nanoribbons Induced by an Interlayer Bias Voltage

PHYSICAL REVIEW LETTERS

OKUGAWA R, TANAKA J, KORETSUNE T, SAITO S, MURAKAMI S