国家/地区 China（13）
关键词 GRAPHENE（3）
出版物 NANOSCALE（3） SCIENTIFIC REPORTS（3） APPLIED PHYSICS LET.（2）
出版时间 2013（6） 2015（3） 2014（2）
机构 TSINGHUA UNIV（13）
作者 QIAN H（13）

Inverted process for graphene integrated circuits fabrication

NANOSCALE

LV HM, WU HQ, LIU JB, HUANG C, LI JF, YU JH, NIU JB, XU QX, YU ZP, QIAN H

Graphene nonvolatile memory prototype based on charge-transfer mechanism

APPLIED PHYSICS EXPRESS

LV HM, WU HQ, HUANG C, WANG YD, QIAN H

High carrier mobility in suspended-channel graphene field effect transistors

APPLIED PHYSICS LETTERS

LV HM, WU HQ, LIU JB, YU JH, NIU JB, LI JF, XU QX, WU XM, QIAN H

Graphene applications in electronic and optoelectronic devices and circuits

CHINESE PHYSICS B

WU HQ, LINGHU CY, LU HM, QIAN H

Graphene mobility enhancement by organosilane interface engineering

APPLIED PHYSICS LETTERS

LV HM, WU HQ, XIAO K, ZHU WN, XU HL, ZHANG ZY, QIAN H

Influence of edge imperfections on the transport behavior of graphene nanomeshes

NANOSCALE

JI X, ZHANG JY, WANG Y, QIAN H, YU ZP

The study of the effects of cooling conditions on high quality graphene growth by the APCVD method

NANOSCALE

XIAO K, WU HQ, LV HM, WU XM, QIAN H

A theoretical model for metal-graphene contact resistance using a DFT-NEGF method

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

JI X, ZHANG JY, WANG Y, QIAN H, YU ZP

Research progress of graphene radio frequency devices

ACTA PHYSICA SINICA

LU Q, LYU HM, WU XM, WU HQ, QIAN H

Deep-submicron Graphene Field-Effect Transistors with State-of-Art f(max)

SCIENTIFIC REPORTS

LYU HM, LU Q, LIU JB, WU XM, ZHANG JY, LI JF, NIU JB, YU ZP, WU HQ, QIAN H