国家/地区 Usa（2）
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出版物
出版时间
机构 UNIV S CAROLINA（2）
作者 DANIELS K（2）

SiC Homoepitaxy, Etching and Graphene Epitaxial Growth on SiC Substrates Using a Novel Fluorinated Si Precursor Gas (SiF4)

JOURNAL OF ELECTRONIC MATERIALS

RANA T, CHANDRASHEKHAR MVS, DANIELS K, SUDARSHAN T

Epitaxial growth of graphene on SiC by Si selective etching using SiF4 in an inert ambient

JAPANESE JOURNAL OF APPLIED PHYSICS

RANA T, CHANDRASHEKHAR MVS, DANIELS K, SUDARSHAN T