国家/地区 China（10）
关键词 GRAPHENE（5） SYNCHROTRON RADIATI.（4） 6HSIC（3）
SI SUBSTRATE（2）
出版物 ACTA PHYSICA SINICA（2） ACTA PHYSICOCHIMICA.（2） CHINESE PHYSICS LET.（2）
出版时间 2011（5） 2012（3）
机构 UNIV SCI TECHNOL CHINA（10）
作者 TANG J（10）

Effect of substrate temperature on few-layer graphene grown on Al2O3 (0001) via direct carbon atoms deposition

SOLID STATE COMMUNICATIONS

LIU ZL, TANG J, KANG CY, ZOU CW, YAN WS, XU PS

Growth and characterization of graphene on SiO2/Si substrate

ACTA PHYSICA SINICA

KANG CY, TANG J, LI LM, YAN WS, XU PS, WEI SQ

In situ study on the electronic structure of graphene grown on 6H-SiC (0 0 0 (1)over-bar) with synchrotron radiation photoelectron spectroscopy

APPLIED SURFACE SCIENCE

KANG CY, TANG J, LI LM, PAN HB, XU PS, WEI SQ, CHEN XF, XU XG

Direct Graphene Growth by Depositing Carbon Atoms on Si Substrate Covered by SiC Buffer Layers

ACTA PHYSICOCHIMICA SINICA

TANG J, KANG CY, LI LM, XU PS

Growth of Few-Layer Graphene on Sapphire Substrates by Directly Depositing Carbon Atoms

CHINESE PHYSICS LETTERS

KANG CY, TANG J, LIU ZL, LI LM, YAN WS, WEI SQ, XU PS

Graphene films grown on Si substrate via direct deposition of solid-state carbon atoms

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

TANG J, KANG CY, LI LM, YAN WS, WEI SQ, XU PS

Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

JOURNAL OF INORGANIC MATERIALS

LI LM, TANG J, KANG CY, PAN GQ, YAN WS, WEI SQ, XU PS

Preparation of graphene on different-polarity 6H-SiC substrates and the study of their electronic structures

ACTA PHYSICA SINICA

KANG CY, TANG J, LI LM, PAN HB, YAN WS, XU PS, WEI SQ, CHEN XF, XU XG

Annealing Time Dependence of Morphology and Structure of Epitaxial Graphene on 6H-SiC(0001) Surface

ACTA PHYSICOCHIMICA SINICA

TANG J, LIU ZL, KANG CY, YAN WS, XU PS, PAN HB, WEI SQ, GAO YQ, XU XG

Epitaxial Growth of Graphene on 6H-SiC (0001) by Thermal Annealing

CHINESE PHYSICS LETTERS

TANG J, LIU ZL, KANG CY, PAN HB, WEI SQ, XU PS, GAO YQ, XU XG