国家/地区 Usa（4）
关键词
出版物 APPLIED PHYSICS LETTERS（4）
出版时间 2014（2）
机构 UNIV TEXAS AUSTIN（4）
作者 CHOWDHURY SF（4）

Improvement of graphene field-effect transistors by hexamethyldisilazane surface treatment

APPLIED PHYSICS LETTERS

CHOWDHURY SF, SONDE S, RAHIMI S, TAO L, BANERJEE S, AKINWANDE D

Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications

APPLIED PHYSICS LETTERS

RAMON ME, MOVVA HCP, CHOWDHURY SF, PARRISH KN, RAI A, MAGNUSON CW, RUOFF RS, AKINWANDE D, BANERJEE SK

Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions

APPLIED PHYSICS LETTERS

MOVVA HCP, RAMON ME, CORBET CM, SONDE S, CHOWDHURY SF, CARPENTER G, TUTUC E, BANERJEEL SK

Enhanced sensitivity of graphene ammonia gas sensors using molecular doping

APPLIED PHYSICS LETTERS

ZANJANI SMM, SADEGHI MM, HOLT M, CHOWDHURY SF, TAO L, AKINWANDE D