国家/地区 China（16）
关键词
出版物 APPLIED PHYSICS LET.（4） CARBON（4） JOURNAL OF APPLIED .（2）
出版时间 2013（4） 2018（4） 2012（2） 2017（2）
机构 XI AN JIAO TONG UNIV（16）
作者 HU TW（16）

Bismuth mediated defect engineering of epitaxial graphene on SiC(0001)

CARBON

HU TW, MA DY, FANG QL, ZHANG P, LIU XT, WEI R, PAN Y, XU KW, MA F

Formation of Micro- and Nano-Trenches on Epitaxial Graphene

APPLIED SCIENCESBASEL

HU TW, LIU XT, MA DY, WEI R, XU KW, MA F

Nanostructured Bi Grown on Epitaxial Graphene/SiC

JOURNAL OF PHYSICAL CHEMISTRY LETTERS

HU TW, HUI X, ZHANG XH, LIU XT, MA DY, WEI R, XU KW, MA F

Enhanced n-doping of epitaxial graphene on SiC by bismuth

APPLIED PHYSICS LETTERS

HU TW, FANG QL, ZHANG XH, LIU XT, MA DY, WEI R, XU KW, MA F

Thickness dependent Raman spectra and interfacial interaction between Ag and epitaxial graphene on 6H-SiC(0001)

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

LIU XT, FANG QL, HU TW, MA DY, ZHANG XH, LIU S, MA F, XU KW

Molecular dynamics simulation on double-elastic deformation of zigzag graphene nanoribbons at low temperature

MATERIALS SCIENCE ENGINEERING BADVANCED FUNCTIONAL SOLIDSTATE MATERIALS

SUN YJ, HUANG YH, MA F, MA DY, HU TW, XU KW

Effects of loading mode and orientation on deformation mechanism of graphene nano-ribbons

APPLIED PHYSICS LETTERS

SUN YJ, MA F, HUANG YH, HU TW, XU KW, CHU PK

Electronic states in hybrid boron nitride and graphene structures

JOURNAL OF APPLIED PHYSICS

ZHAO M, HUANG YH, MA F, HU TW, XU KW, CHU PK

Evidence of atomically resolved 6x6 buffer layer with long-range order and short-range disorder during formation of graphene on 6H-SiC by thermal decomposition

APPLIED PHYSICS LETTERS

HU TW, MA F, MA DY, YANG D, LIU XT, XU KW, CHU PK

Direct and diffuse reflection of electron waves at armchair edges of epitaxial graphene

RSC ADVANCES

HU TW, MA DY, MA F, XU KW, CHU PK