国家/地区 China（10）
关键词
出版物 CARBON（4） APPLIED PHYSICS LET.（2）
出版时间 2018（4） 2017（2）
机构 XI AN JIAO TONG UNIV（10）
作者 LIU XT（10）

Bismuth mediated defect engineering of epitaxial graphene on SiC(0001)

CARBON

HU TW, MA DY, FANG QL, ZHANG P, LIU XT, WEI R, PAN Y, XU KW, MA F

Formation of Micro- and Nano-Trenches on Epitaxial Graphene

APPLIED SCIENCESBASEL

HU TW, LIU XT, MA DY, WEI R, XU KW, MA F

Nanostructured Bi Grown on Epitaxial Graphene/SiC

JOURNAL OF PHYSICAL CHEMISTRY LETTERS

HU TW, HUI X, ZHANG XH, LIU XT, MA DY, WEI R, XU KW, MA F

Enhanced n-doping of epitaxial graphene on SiC by bismuth

APPLIED PHYSICS LETTERS

HU TW, FANG QL, ZHANG XH, LIU XT, MA DY, WEI R, XU KW, MA F

Thickness dependent Raman spectra and interfacial interaction between Ag and epitaxial graphene on 6H-SiC(0001)

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

LIU XT, FANG QL, HU TW, MA DY, ZHANG XH, LIU S, MA F, XU KW

Evidence of atomically resolved 6x6 buffer layer with long-range order and short-range disorder during formation of graphene on 6H-SiC by thermal decomposition

APPLIED PHYSICS LETTERS

HU TW, MA F, MA DY, YANG D, LIU XT, XU KW, CHU PK

Near-free-standing epitaxial graphene on rough SiC substrate by flash annealing at high temperature (vol 120, pg 219, 2017)

CARBON

HU TW, BAO HW, LIU S, LIU XT, MA DY, MA F, XU KW

Near-free-standing epitaxial graphene on rough SiC substrate by flash annealing at high temperature

CARBON

HU TW, BAO HW, LIU S, LIU XT, MA DY, MA F, XU KW

Substitutional doping of Ag into epitaxial graphene on 6H-SiC substrates during thermal decomposition

CARBON

LIU XT, HU TW, MIAO YP, MA DY, YANG Z, MA F, XU KW, CHU PK

Selective growth of Pb islands on graphene/SiC buffer layers

JOURNAL OF APPLIED PHYSICS

LIU XT, HU TW, MIAO YP, MA DY, CHU PK, MA F, XU KW