国家/地区 China（5）
关键词
出版物 APPLIED PHYSICS LETTERS（5）
出版时间 2012（2） 2013（2）
机构 XI AN JIAO TONG UNIV（5）
作者 MA F（5）

Enhanced n-doping of epitaxial graphene on SiC by bismuth

APPLIED PHYSICS LETTERS

HU TW, FANG QL, ZHANG XH, LIU XT, MA DY, WEI R, XU KW, MA F

Effects of loading mode and orientation on deformation mechanism of graphene nano-ribbons

APPLIED PHYSICS LETTERS

SUN YJ, MA F, HUANG YH, HU TW, XU KW, CHU PK

Evidence of atomically resolved 6x6 buffer layer with long-range order and short-range disorder during formation of graphene on 6H-SiC by thermal decomposition

APPLIED PHYSICS LETTERS

HU TW, MA F, MA DY, YANG D, LIU XT, XU KW, CHU PK

Preferred armchair edges of epitaxial graphene on 6H-SiC(0001) by thermal decomposition

APPLIED PHYSICS LETTERS

HU TW, MA DY, MA F, XU KW

Strain effect on lattice vibration, heat capacity, and thermal conductivity of graphene

APPLIED PHYSICS LETTERS

MA F, ZHENG HB, SUN YJ, YANG D, XU KW, CHU PK