国家/地区 Korea（4）
关键词 FIELD EFFECT TRANSISTOR（6）
出版物 ACS APPLIED MATERIALS INTERFACES（6）
出版时间 2015（2）
机构 JEJU NATL UN.（2）
作者 KIM SJ（2） SARAVANAKUMA.（2） THIYAGARAJAN.（2）

Schottky Barrier Variable Graphene/Multilayer-MoS2 Heterojunction Transistor Used to Overcome Short Channel Effects

ACS APPLIED MATERIALS INTERFACES

LEE I, KIM JN, KANG WT, SHIN YS, LEE BH, YU WJ

Photoinduced Hysteresis of Graphene Field-Effect Transistors Due to Hydrogen-Complexed Defects in Silicon Dioxide

ACS APPLIED MATERIALS INTERFACES

CAO GM, LIU XR, ZHANG YT, LIU WH, DENG MM, CHEN GB, ZHANG GH, LI QF, BEKA LG, LI X, WANG XL

Self-Induced Gate Dielectric for Graphene Field-Effect Transistor

ACS APPLIED MATERIALS INTERFACES

THIYAGARAJAN K, SARAVANAKUMAR B, MOHAN R, KIM SJ

Surface Modulation of Graphene Field Effect Transistors on Periodic Trench Structure

ACS APPLIED MATERIALS INTERFACES

JIN JE, CHOI JH, YUN H, JANG HK, LEE BC, CHOI A, JOO MK, DETTLAFFWEGLIKOWSKA U, ROTH S, LEE SW, LEE JW, KIM GT

Gate-Tunable Photoresponse of Defective Graphene: from Ultraviolet to Visible

ACS APPLIED MATERIALS INTERFACES

THIYAGARAJAN K, SARAVANAKUMAR B, KIM SJ

Modification of Graphene/SiO2 Interface by UV-Irradiation: Effect on Electrical Characteristics

ACS APPLIED MATERIALS INTERFACES

IMAMURA G, SAIKI K