国家/地区 Singapore（4） China（2）
关键词 SCANNING TUNNELING .（4） SILICON CARBIDE（4） EPITAXIAL GRAPHENE（3）
出版物 ACS NANO（7）
出版时间 2011（2）
机构 NATL UNIV SI.（4）
作者 WEE ATS（7）

Incorporating Isolated Molybdenum (Mo) Atoms into Bilayer Epitaxial Graphene on 4H-SiC(0001)

ACS NANO

WAN W, LI H, HUANG H, WONG SH, LV L, GAO YL, WEE ATS

Graphene: The Game Changer?

ACS NANO

WEE ATS

Quasi-Free-Standing Epitaxial Graphene on SiC (0001) by Fluorine Intercalation from a Molecular Source

ACS NANO

WONG SL, HUANG H, WANG YZ, CAO L, QI DC, SANTOSO I, CHEN W, WEE ATS

Laser Patterning of Epitaxial Graphene for Schottky Junction Photodetectors

ACS NANO

SINGH RS, NALLA V, CHEN W, WEE ATS, JI W

Structural and Electronic Properties of PTCDA Thin Films on Epitaxial Graphene

ACS NANO

HUANG H, CHEN S, GAO XY, CHEN W, WEE ATS

Bottom-up Growth of Epitaxial Graphene on 6H-SiC(0001)

ACS NANO

HUANG H, CHEN W, CHEN S, WEE ATS

Low Temperature Critical Growth of High Quality Nitrogen Doped Graphene on Dielectrics by Plasma-Enhanced Chemical Vapor Deposition

ACS NANO

WEI DC, PENG L, LI ML, MAO HY, NIU TC, HAN C, CHEN W, WEE ATS