国家/地区 Korea（4）
关键词
出版物 ADVANCED ELECTRONIC MATERIALS（4）
出版时间 2016（2）
机构 SUNGKYUNKWAN UNIV（4）
作者

Suppressing Ambipolar Characteristics of WSe2 Field Effect Transistors Using Graphene Oxide

ADVANCED ELECTRONIC MATERIALS

OH HM, PARK C, BANG S, YUN SJ, DUONG NT, JEONG MS

2D Doping Layer for Flexible Transparent Conducting Graphene Electrodes with Low Sheet Resistance and High Stability

ADVANCED ELECTRONIC MATERIALS

SEO YM, CHO HJ, JANG HS, JANG W, LIM JY, JANG Y, GU T, CHOI JY, WHANG D

Graphene Transistors Gated by Salted Proton Conductor

ADVANCED ELECTRONIC MATERIALS

KIM H, KIM BJ, SUN QJ, KANG MS, CHO JH

Mobility Enhancement of Transparent IZO/GrRM Heterostructure via Graphene-Random-Mesh Carrier Pathways

ADVANCED ELECTRONIC MATERIALS

SHIN YS, KANG WT, KIM YR, WON UY, LEE KY, HEO JS, PARK SJ, LEE YH, YU WJ