国家/地区 Korea（3）
关键词 FIELDEFFECT TRANSISTOR（5）
出版物 ADVANCED MATERIALS（5）
出版时间 2012（5）
机构
作者

Highly Air-Stable Phosphorus-Doped n-Type Graphene Field-Effect Transistors

ADVANCED MATERIALS

SOME S, KIM J, LEE K, KULKARNI A, YOON Y, LEE S, KIM T, LEE H

High Thermal Responsiveness of a Reduced Graphene Oxide Field-Effect Transistor

ADVANCED MATERIALS

TRUNG TQ, TIEN NT, KIM D, JUNG JH, YOON OJ, LEE NE

Fabrication of Graphene Nanomesh by Using an Anodic Aluminum Oxide Membrane as a Template

ADVANCED MATERIALS

ZENG ZY, HUANG X, YIN ZY, LI H, CHEN Y, LI H, ZHANG Q, MA J, BOEY F, ZHANG H

Quantitative Analysis of the Role of the First Layer in p- and n-Type Organic Field-Effect Transistors with Graphene Electrodes

ADVANCED MATERIALS

WEN YG, CHEN JY, ZHANG L, SUN XN, ZHAO Y, GUO YL, YU G, LIU YQ

Single-Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping

ADVANCED MATERIALS

PARK J, JO SB, YU YJ, KIM Y, YANG W, LEE WH, KIM HH, HONG BH, KIM P, CHO K, KIM KS