国家/地区 | China(3) Korea(3) France(2) |
关键词 | SILICON(14) |
出版物 | APPLIED PHYSICS LETTERS(14) |
出版时间 | 2010(9) 2009(2) 2012(2) |
机构 | |
作者 |
AUFRAY B(2)
KARA A(2)
LE LAY G(2)
OUGHADDOU H(2)
|
APPLIED PHYSICS LETTERS
MAO JH, HUANG L, PAN Y, GAO M, HE JF, ZHOU HT, GUO HM, TIAN Y, ZOU Q, ZHANG LZ, ZHANG HG, WANG YL, DU SX, ZHOU XJ, CASTRO NETO AH, GAO HJ
Nonvolatile memory with graphene oxide as a charge storage node in nanowire field-effect transistors
APPLIED PHYSICS LETTERS
BAEK DJ, SEOL ML, CHOI SJ, MOON DI, CHOI YK
APPLIED PHYSICS LETTERS
XIE C, LV P, NIE BA, JIE JS, ZHANG XW, WANG Z, JIANG P, HU ZZ, LUO LB, ZHU ZF, WANG L, WU CY
APPLIED PHYSICS LETTERS
HOUSSA M, POURTOIS G, AFANAS EV VV, STESMANS A
APPLIED PHYSICS LETTERS
IHM K, LIM JT, LEE KJ, KWON JW, KANG TH, CHUNG S, BAE S, KIM JH, HONG BH, YEOM GY
APPLIED PHYSICS LETTERS
DE PADOVA P, QUARESIMA C, OTTAVIANI C, SHEVERDYAEVA PM, MORAS P, CARBONE C, TOPWAL D, OLIVIERI B, KARA A, OUGHADDOU H, AUFRAY B, LE LAY G
APPLIED PHYSICS LETTERS
OUERGHI A, KAHOULI A, LUCOT D, PORTAIL M, TRAVERS L, GIERAK J, PENUELAS J, JEGOU P, SHUKLA A, CHASSAGNE T, ZIELINSKI M
APPLIED PHYSICS LETTERS
AUFRAY B, KARA A, VIZZINI S, OUGHADDOU H, LEANDRI C, EALET B, LE LAY G
APPLIED PHYSICS LETTERS
WANG S, PU J, CHAN DSH, CHO BJ, LOH KP
APPLIED PHYSICS LETTERS
AKTURK E, ATACA C, CIRACI S