国家/地区 China（3）
关键词 FIELD EFFECT TRANSISTOR（3）
出版物 APPLIED PHYSICS LETTERS（3）
出版时间 2010（2）
机构
作者

Unintentional doping induced splitting of G peak in bilayer graphene (vol 99, 233110, 2011)

APPLIED PHYSICS LETTERS

LIN SS, CHEN BG, PAN CT, HU S, TIAN P, TONG LM

Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors

APPLIED PHYSICS LETTERS

KANG JH, HE Y, ZHANG JY, YU XX, GUAN XM, YU ZP

A high-performance top-gate graphene field-effect transistor based frequency doubler

APPLIED PHYSICS LETTERS

WANG ZX, ZHANG ZY, XU HL, DING L, WANG S, PENG LM