国家/地区 Usa（9）
关键词 GRAPHENE（3） CARRIER MOBILITY（2） QUANTUM HALL EFFECT（2）
出版物 APPLIED PHYSICS LETTERS（10）
出版时间 2011（2） 2014（2）
机构 GEORGIA INST TECHNOL（10）
作者 BERGER C（10）

1/f Noise in epitaxial sidewall graphene nanoribbons

APPLIED PHYSICS LETTERS

VAIL O, HANKINSON J, BERGER C, DE HEER WA, JIANG Z

Controlled epitaxial graphene growth within removable amorphous carbon corrals

APPLIED PHYSICS LETTERS

PALMER J, KUNC J, HU YK, HANKINSON J, GUO ZL, BERGER C, DE HEER WA

Local work function measurements of plasma-fluorinated epitaxial graphene

APPLIED PHYSICS LETTERS

SHERPA SD, KUNC J, HU YK, LEVITIN G, DE HEER WA, BERGER C, HESS DW

A method to extract pure Raman spectrum of epitaxial graphene on SiC

APPLIED PHYSICS LETTERS

KUNC J, HU Y, PALMER J, BERGER C, DE HEER WA

X-ray radiation effects in multilayer epitaxial graphene

APPLIED PHYSICS LETTERS

HICKS J, ARORA R, KENYON E, CHAKRABORTY PS, TINKEY H, HANKINSON J, BERGER C, DE HEER WA, CONRAD EH, CRESSLER JD

Thermoelectric effect in high mobility single layer epitaxial graphene

APPLIED PHYSICS LETTERS

WU XS, HU Y, RUAN M, MADIOMANANA NK, BERGER C, DE HEER WA

Structured epitaxial graphene growth on SiC by selective graphitization using a patterned AlN cap

APPLIED PHYSICS LETTERS

RUBIOROY M, ZAMAN F, HU YK, BERGER C, MOSELEY MW, MEINDL JD, DE HEER WA

Half integer quantum Hall effect in high mobility single layer epitaxial graphene

APPLIED PHYSICS LETTERS

WU XS, HU YK, RUAN M, MADIOMANANA NK, HANKINSON J, SPRINKLE M, BERGER C, DE HEER WA

Highly ordered graphene for two dimensional electronics

APPLIED PHYSICS LETTERS

HASS J, FENG R, LI T, LI X, ZONG Z, DE HEER WA, FIRST PN, CONRAD EH, JEFFREY CA, BERGER C

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

APPLIED PHYSICS LETTERS

PUYBARET R, PATRIARCHE G, JORDAN MB, SUNDARAM S, EL GMILI Y, SALVESTRINI JP, VOSS PL, DE HEER WA, BERGER C, OUGAZZADEN A