国家/地区
关键词
出版物 ELECTRONICS LETTERS（3）
出版时间 2011（3）
机构
作者

Doping effect on shift of threshold voltage of graphene-based field-effect transistors

ELECTRONICS LETTERS

GUO B, FANG L, ZHANG B, GONG JR

Electrophoretic graphene for transparent counter electrodes in dye-sensitised solar cells

ELECTRONICS LETTERS

CHOI H, HWANG S, BAE H, KIM S, KIM H, JEON M

U-shaped bilayer graphene channel transistor with very high I-on/I-off ratio

ELECTRONICS LETTERS

MOKTADIR Z, BODEN SA, GHIASS A, RUTT H, MIZUTA H