国家/地区
关键词 QUANTUM TRANSPORT（3）
出版物 IEEE ELECTRON DEVICE LETTERS（3）
出版时间 2015（2）
机构
作者

Negative Differential Resistance and Steep Switching in Chevron Graphene Nanoribbon Field-Effect Transistors

IEEE ELECTRON DEVICE LETTERS

SMITH S, LLINAS JP, BOKOR J, SALAHUDDIN S

Simulations of Graphene Base Transistors With Improved Graphene Interface Model

IEEE ELECTRON DEVICE LETTERS

DI LECCE V, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Vertical Tunneling Graphene Heterostructure-Based Transistor for Pressure Sensing

IEEE ELECTRON DEVICE LETTERS

GHOBADI N, POURFATH M