国家/地区 India（31）
关键词 GRAPHENE（16） CONTACT RESISTANCE（3） DENSITY FUNCTIONAL .（3）
DENSITY OF STATES D.（3） LASERINDUCED GRAPHE.（3） MOBILITY（3）
PHONON（3） SENSITIVITY（3） SENSOR（3）
2D MATERIAL（2） CHARGE DENSITY DIFF.（2） DRIFTDIFFUSION（2）
EXPERIMENTAL STUDY（2） FIELDEFFECT TRANSIS.（2） GAS DETECTOR（2）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（31）
出版时间 2013（5） 2022（5） 2020（4） 2021（4） 2015（3） 2018（3） 2019（3） 2017（2）
机构 INDIAN INST .（7） IIT KHARAGPU.（3）
作者 BHATTACHARYA.（5） GOEL S（5） MAHAPATRA S（5） VERMA R（4）
CHAKRABARTI .（3） GUHA PK（3） KOTHURU A（3） MANNA B（3）
SHRIVASTAVA .（3） MEERSHA A（2） MISHRA A（2）

Amplified Methanol Sensitivity in Reduced Graphene Oxide FET Using Appropriate Gate Electrostatic

IEEE TRANSACTIONS ON ELECTRON DEVICES

HAZRA A

A Lithography-Free Fabrication of Low-Operating Voltage-Driven, Very Large Channel Length Graphene Field-Effect Transistor With NH3 Sensing Application

IEEE TRANSACTIONS ON ELECTRON DEVICES

CHOURASIA NK, SINGH AK, RAI S, SHARMA A, CHAKRABARTI P, SRIVASTAVA A, PAL BN

Graphene Oxide Wrapped Hollow SnO2 Sphere for Room Temperature Formaldehyde Sensing: An Insight Through Computational Analysis & Experimental Study

IEEE TRANSACTIONS ON ELECTRON DEVICES

MANNA B, ACHARYYA S, CHAKRABARTI I, GUHA PK

PDMS-Based Microfluidic Glucose Biofuel Cell Integrated With Optimized Laser-Induced Flexible Graphene Bioelectrodes

IEEE TRANSACTIONS ON ELECTRON DEVICES

REWATKAR P, KOTHURU A, GOEL S

Highly Efficient and Broadband Hybrid Photodetector Based on 2-D Layered Graphene/CTS Quantum Dots

IEEE TRANSACTIONS ON ELECTRON DEVICES

YADAV SM, PANDEY A

Platinum Nanoparticles Decorated Graphene Oxide Based Resistive Device for Enhanced Formaldehyde Sensing: First-Principle Study and its Experimental Correlation

IEEE TRANSACTIONS ON ELECTRON DEVICES

MANNA B, CHAKRABARTI I, GUHA PK

On the ESD Behavior of Large-Area CVD Graphene Transistors: Physical Insights and Technology Implications

IEEE TRANSACTIONS ON ELECTRON DEVICES

KRANTHI NK, MISHRA A, MEERSHA A, SHRIVASTAVA M

Explicit Model of Channel Charge, Backscattering, and Mobility for Graphene FET in Quasi-Ballistic Regime

IEEE TRANSACTIONS ON ELECTRON DEVICES

UPADHYAY AK, KUSHWAHA AK, RASTOGI P, CHAUHAN YS, VISHVAKARMA SK

Selective Reduction o Oxygen Functional Groups to Improve the Response Characteristics of Graphene Oxide-Based Formaldehyde Sensor Device: A First Principle Study

IEEE TRANSACTIONS ON ELECTRON DEVICES

MANNA B, RAHA H, CHAKRABARTI I, GUHA PK

Hole-Collecting Treated Graphene Layer and PTB7:PC71 BM-Based Bulk-Heterojunction OPV With Improved Carrier Collection and Photovoltaic Efficiency

IEEE TRANSACTIONS ON ELECTRON DEVICES

MAITY S, THOMAS T