国家/地区 Japan（4）
关键词
出版物 JAPANESE JOURNAL OF APPLIED PHYSICS（4）
出版时间 2009（4）
机构 HOKKAIDO UNI.（3）
作者 OTSUJI T（4）

Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Graphene Nanoribbon Phototransistor: Proposal and Analysis

JAPANESE JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, RYABOVA N, MITIN V, OTSUJI T

Theoretical Evaluation of Channel Structure in Graphene Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Performance Prediction of Graphene-Channel Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T