国家/地区 China（2） Japan（2）
关键词 MOLECULAR BEAM EPITAXY（8）
出版物 NANOTECHNOLOGY（8）
出版时间 2019（2）
机构
作者 KISHINO K（2）

Substrate temperature dependence of the crystalline quality for the synthesis of pure-phase MoTe2 on graphene/6H-SiC(0001) by molecular beam epitaxy

NANOTECHNOLOGY

CASTELINO R, PHAM TT, FELTEN A, SPORKEN R

Spontaneous intercalation of Ga and In bilayers during plasma-assisted molecular beam epitaxy growth of GaN on graphene on SiC

NANOTECHNOLOGY

FELDBERG N, KLYMOV O, GARRO N, CROS A, MOLLARD N, OKUNO H, GRUART M, DAUDIN B

Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer

NANOTECHNOLOGY

LIUDI MULYO A, RAJPALKE MK, KUROE H, VULLUM PE, WEMAN H, FIMLAND BO, KISHINO K

Effect of high carbon incorporation in Co substrates on the epitaxy of hexagonal boron nitride/graphene heterostructures

NANOTECHNOLOGY

KHANAKI A, TIAN H, XU ZG, ZHENG RJ, HE YW, CUI ZJ, YANG JC, LIU JL

A visualization method for probing grain boundaries of single layer graphene via molecular beam epitaxy

NANOTECHNOLOGY

ZHAN LJ, WAN W, ZHU ZW, ZHAO ZJ, ZHANG ZH, SHIH TM, CAI WW

Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer

NANOTECHNOLOGY

HAYASHI H, KONNO Y, KISHINO K

Defect seeded remote epitaxy of GaAs films on graphene

NANOTECHNOLOGY

ZULQURNAIN M, BURTON OJ, ALHADA M, GOFF LE, HOFMANN S, HIRST LC

Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide

NANOTECHNOLOGY

LU H, LIU WJ, WANG HL, LIU X, ZHANG YQ, YANG DR, PI XD