国家/地区
IPC部
IPC大类
IPC小类
IPC
发明人
公开年 2008（2）
申请年 2007（2）
专利权人 FUJITSU LTD（2）

Graphene transistor e.g. FET for high frequencies, has gate electrode that is formed while forming source electrode in one edge, and drain electrode on other edge of insulator.

HIROSE S, IWAI D

Manufacture of surface-modified carbon nanomaterial for electronic component, involves irradiating material having carbon nanotube and graphene with vacuum ultraviolet ray, and supplying substance modifying surface of nanomaterial.

ASANO K