国家/地区 韩国（3） 美国（2）
IPC部 B（2） C（2） H（2）
IPC大类 B82（2） H01（2）
IPC小类 B82Y（2） H01L（2）
IPC
发明人
公开年 2012（3）
申请年 2011（3）
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（3）

Graphene device comprises a source and a drain, formed on a substrate, a graphene channel formed on the substrate between the source and the drain, and a gate formed on a dielectric layer on the graphene channel.

CHO B J, MUN J H

Manufacture of graphene quantum dots for next-generation displays, involves coating block copolymer on material layer with graphene layer, forming self-assembled structure by heating, and etching material layer using structure as mask.

HO K G, IK P U, SEOP L J, SIK J Y, U JEON S, JEON S W, JUNG Y S, KIM K H, LEE J S, PARK W I

Manufacture of transparent graphene film for device e.g. display, involves forming graphene oxide thin film on substrate, performing chemical reduction, and carrying out secondary thermal reduction and nitrogen doping.

KIM S O, HWANG J O, LEE D H