国家/地区 美国（4） 世界知识产权组织（3）
IPC部 B（4）
IPC大类 B82（4）
IPC小类 C01B（4）
IPC C01B031/04（3） B82Y040/00（2） C01B031/02（2）
发明人
公开年 2012（4）
申请年 2011（4）
专利权人

Forming single-layer graphene film by replacing portion of air in a reactor having a substrate with a buffer gas, flowing the buffer gas through the reactor and then heating the reactor, and passing the buffer gas through liquid precursors.

RADHAKRISHNAN G, ADAMS P M

Producing graphene, comprises fixing seed crystal to support substrate, providing feedstock adjacent to seed crystal about the location, and applying laser beam to heat portion of seed crystal and portion of feedstock.

HAUCK J P

Producing an array of single-crystal graphene islands, to make e.g. transistor, comprises e.g. providing substrate, cleaning substrate surface, spin-coating poly(methyl methacrylate) layer on the surface, curing, and performing lithography.

YU Q, PEI S

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X